KSD1408 transistor equivalent, silicon npn power transistor.
*Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*Low Collector Saturation Voltage
: VCE(sat)= 1.5V(Max)@ IC= 3A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
*Complement to Type KSB1017
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
perfor.
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